NXP Semiconductors - BLC8G20LS-310AV

  1. Home
  2. NXP Semiconductors - BLC8G20LS-310AV
BLC8G20LS-310AV by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLC8G20LS-310AV
Description RF Power Field-Effect Transistors;
Datasheet BLC8G20LS-310AV Datasheet
In Stock435
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
435 - -

Popular Products

Category Top Products

A3T19H455W23SR6 by NXP Semiconductors

A3T19H455W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A2T21S260W12NR3 by NXP Semiconductors

A2T21S260W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
CG2H40045P by Wolfspeed

CG2H40045P

Wolfspeed

CG2H40045P by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage. Featuring 15dB Power Gain, it operates in S BAND for AMPLIFIER applications. Utilizing GALLIUM NITRIDE tech, it has a max ID of 6A and can withstand temps from -40 to 150 °C.
MRF9045 by Motorola

MRF9045

Motorola

MRF9045 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, suitable for amplifier applications. With a max power dissipation of 125W and operating temperature up to 200°C, it features a ceramic-metal-sealed co-fired package ideal for flange mount installations.
PD54003STR-E by STMicroelectronics

PD54003STR-E

STMicroelectronics

PD54003STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
SD56120 by STMicroelectronics

SD56120

STMicroelectronics

SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
BLF175,112 by NXP Semiconductors

BLF175,112

NXP Semiconductors

NXP Semiconductors' BLF175,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 4A Drain Current. Ideal for amplifiers in the VHF band, it operates in Enhancement Mode with a max power dissipation of 68W. The METAL-OXIDE SEMICONDUCTOR technology ensures high performance in very high frequency applications.
SD2921-10 by STMicroelectronics

SD2921-10

STMicroelectronics

SD2921-10 by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W.
A2T20H330W24SR6 by NXP Semiconductors

A2T20H330W24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
RF5L0912750CB4 by STMicroelectronics

RF5L0912750CB4

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
MRF134 by Motorola

MRF134

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MRF1513T1 by Freescale Semiconductor

MRF1513T1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;
TIM3742-25UL by Toshiba

TIM3742-25UL

Toshiba

Toshiba's TIM3742-25UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a max drain current of 20A and a power dissipation of 100W, this transistor operates in depletion mode at up to 175°C ambient temperature.
BLF147 by NXP Semiconductors

BLF147

NXP Semiconductors

The NXP Semiconductors BLF147 is a single N-channel RF Power FET with a very high frequency band. It has a max drain current of 25A, operating in enhancement mode for amplifier applications. With a package style of flange mount and ceramic-metal-sealed co-fired body material, it offers a max power dissipation of 220W at 200°C ambient temperature.
A3T18H455W23SR6 by NXP Semiconductors

A3T18H455W23SR6

NXP Semiconductors

NXP Semiconductors A3T18H455W23SR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 15dB Power Gain, and L BAND frequency. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with a temperature range of -40 to 225 °C.
PD84008L-E by STMicroelectronics

PD84008L-E

STMicroelectronics

PD84008L-E by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates at up to 150 °C. This surface-mount transistor ensures efficient performance in compact designs.
PD54003-01 by STMicroelectronics

PD54003-01

STMicroelectronics

PD54003-01 by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a 25V min breakdown voltage, 4A max drain current, and operates in enhancement mode. This compact chip carrier design ensures efficient performance in demanding environments.
934065696118 by NXP Semiconductors

934065696118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): FLATPACK; Case Connection: SOURCE;
A2T21H360-24SR6 by NXP Semiconductors

A2T21H360-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD85015STR-E by STMicroelectronics

PD85015STR-E

STMicroelectronics

PD85015STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.