NXP Semiconductors - BLF10H6600PS

NXP Semiconductors BLF246B,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 14dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 130W and operates in enhancement mode up to 200°C.

STAC2943 by STMicroelectronics is a N-CHANNEL RF Power FET with 40A max drain current and 795W power dissipation. Ideal for high-power applications, it operates at up to 200 °C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR technology offers reliable performance in demanding environments.

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;

SD2931-10 by STMicroelectronics is an N-channel RF Power FET with a 125V DS breakdown voltage and 20A max drain current. Ideal for UHF applications, it operates in enhancement mode with a max power dissipation of 389W. The transistor features a plastic/epoxy package body, flat terminals, and nickel palladium gold finish.

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; No. of Elements: 1; Maximum Drain Current (ID): 36 A;

PTFA080551EV4R250XTMA1 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18dB Power Gain. It operates in the Ultra High Frequency Band, ideal for amplifier applications. The transistor features a ceramic-metal package, flat terminals, and can withstand temperatures up to 200°C.

Toshiba's TIM5964-35SLA-422 is an N-channel RF Power FET with a ceramic-metal-sealed co-fired package. Operating in depletion mode, it has a max drain current of 20A and can handle up to 115.4W power dissipation. Ideal for amplifier applications in the C band due to its high-frequency capabilities and source case connection.

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

CGH40025P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can withstand temperatures up to 175°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 65 V;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

AFT09MS031NR1 by NXP is an N-CHANNEL RF Power FET with 317W power dissipation. It operates at a max temp of 150°C, ideal for high-power RF applications. With surface mount capability and MSL level 3, it offers efficient performance in various electronic devices.

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; JESD-30 Code: R-CDFP-F2; Operating Mode: DEPLETION MODE;

Mitsubishi Electric's MGF2430A-01 is an N-channel RF Power FET with a single configuration for amplifier applications. Operating in depletion mode, it offers a min power gain of 5.5 dB and can handle up to 0.8 A drain current at a max dissipation of 5 W. Ideal for Ku band frequencies, this transistor features a ceramic-metal-sealed co-fired package body and flat terminal form for surface mount applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 33 A; Package Shape: RECTANGULAR; Terminal Position: DUAL;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

TSD2921 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Min Power Gain of 12dB. It operates in the ULTRA HIGH FREQUENCY BAND, has a Max Power Dissipation of 300W, and is suitable for applications requiring high power amplification in the field of RF communications.

SD4931 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 200 V, and can dissipate up to 389 W. Ideal for high-performance RF amplification in compact designs.