BLF225 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLF225
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Drain Current (ID): 9 A; Transistor Application: AMPLIFIER;
Datasheet	BLF225 Datasheet
In Stock	4,817

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	9 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	68 W
Terminal Position:	RADIAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-CRFM-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	68 W
Maximum Drain-Source On Resistance:	.35 ohm
Minimum Power Gain (Gp):	8.5 dB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	9 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,817	-	-

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