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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | BLF246B,112 |
Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Transistor Application: AMPLIFIER; No. of Elements: 2; |
Datasheet | BLF246B,112 Datasheet |
In Stock | 17 |
NAME | DESCRIPTION |
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Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMMON SOURCE, 2 ELEMENTS |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | 8 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | 130 W |
Terminal Position: | DUAL |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-CDFM-F8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 200 Cel |
Case Connection: | ISOLATED |
Maximum Power Dissipation Ambient: | 130 W |
Maximum Drain-Source On Resistance: | .75 ohm |
Minimum Power Gain (Gp): | 14 dB |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 65 V |
Qualification: | Not Qualified |
Additional Features: | HIGH RELIABILITY |
Maximum Drain Current (Abs) (ID): | 8 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |