NXP Semiconductors - BLF4G10S-120

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BLF4G10S-120 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF4G10S-120
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 12 A; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
Datasheet BLF4G10S-120 Datasheet
In Stock129
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 12 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 12 A
Case Connection: SOURCE
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