NXP Semiconductors - BLF6G21-10G

  1. Home
  2. NXP Semiconductors - BLF6G21-10G
BLF6G21-10G by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G21-10G
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 225 Cel;
Datasheet BLF6G21-10G Datasheet
In Stock2,332
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-CDSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,332 - -

Popular Products

Category Top Products

GS61004B-MR by Gan Systems

GS61004B-MR

Gan Systems

GS61004B-MR by Gan Systems is an N-CHANNEL RF FET with 100V DS breakdown voltage, 45A ID, and -55°C min. operating temp. Ideal for SWITCHING applications in ENHANCEMENT MODE, this PLASTIC/EPOXY chip carrier FET offers SOURCE case connection and GOLD over NICKEL terminal finish.
934056498112 by NXP Semiconductors

934056498112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A; Qualification: Not Qualified;
BLF3G21-30,112 by NXP Semiconductors

BLF3G21-30,112

NXP Semiconductors

NXP Semiconductors' BLF3G21-30,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max Drain Current of 4.5A and operates in ENHANCEMENT MODE at up to 200°C.
AFT09MS031NR1 by Freescale Semiconductor

AFT09MS031NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 317 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
SD2903 by STMicroelectronics

SD2903

STMicroelectronics

SD2903 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with a max Drain Current of 5A. This transistor is commonly used as an amplifier in applications requiring high-frequency performance and power amplification.
MRFE6VP5150GNR1 by Freescale Semiconductor

MRFE6VP5150GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER; No. of Elements: 2;
SD2932 by STMicroelectronics

SD2932

STMicroelectronics

SD2932 by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 500W. It operates in the ultra-high frequency band, making it ideal for high-power applications like amplifiers and transmitters. The transistor features a metal-oxide semiconductor technology and can withstand temperatures up to 200°C.
AFT09MP055GNR1 by NXP Semiconductors

AFT09MP055GNR1

NXP Semiconductors

N-CHANNEL; Maximum Power Dissipation (Abs): 625 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;
MRF1513T1 by Tyco Electronics M/a-com

MRF1513T1

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PQCC-N4; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;
PD84008TR-E by STMicroelectronics

PD84008TR-E

STMicroelectronics

PD84008TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
FLL120MK by Fujitsu Semiconductor America

FLL120MK

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 15 V;
934064687118 by NXP Semiconductors

934064687118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
MRF171A by Tyco Electronics M/a-com

MRF171A

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: ROUND;
LET21004 by STMicroelectronics

LET21004

STMicroelectronics

LET21004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates at frequencies in the S band, and supports a max drain current of 1A. Ideal for compact surface mount designs, it excels in high-temperature environments.
TGF4212XCCX by Texas Instruments

TGF4212XCCX

Texas Instruments

TGF4212XCCX by Texas Instruments is an N-CHANNEL RF Power FET for amplifier applications. Operating in DEPLETION MODE, it offers a Min DS Breakdown Voltage of 10V and works in the KU BAND frequency range. This RECTANGULAR chip with GALLIUM ARSENIDE technology has 4 terminals and is surface mountable.
MRF1517NT1 by Freescale Semiconductor

MRF1517NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
AFT09MS031NR1 by NXP Semiconductors

AFT09MS031NR1

NXP Semiconductors

AFT09MS031NR1 by NXP is an N-CHANNEL RF Power FET with 317W power dissipation. It operates at a max temp of 150°C, ideal for high-power RF applications. With surface mount capability and MSL level 3, it offers efficient performance in various electronic devices.
934065321112 by NXP Semiconductors

934065321112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFP-F4; Terminal Position: DUAL; Terminal Form: FLAT;
CLF1G0035-100 by Ampleon Netherlands B V

CLF1G0035-100

Ampleon Netherlands B V

RF Power Field-Effect Transistors;
PTFA091201EV4R250XTMA1 by Wolfspeed

PTFA091201EV4R250XTMA1

Wolfspeed

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;