NXP Semiconductors - BLF6G22LS-40BN

  1. Home
  2. NXP Semiconductors - BLF6G22LS-40BN
BLF6G22LS-40BN by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G22LS-40BN
Description RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
Datasheet BLF6G22LS-40BN Datasheet
In Stock106
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
106 - -

Popular Products

Category Top Products

934065659112 by NXP Semiconductors

934065659112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Terminal Position: DUAL; Transistor Application: AMPLIFIER;
RF5L15120CB4 by STMicroelectronics

RF5L15120CB4

STMicroelectronics

RF Power Field-Effect Transistors;
MW6S010NR1 by NXP Semiconductors

MW6S010NR1

NXP Semiconductors

The NXP Semiconductors MW6S010NR1 is a single-channel RF Power FET with 68V DS breakdown voltage, ideal for amplifier applications in L Band frequencies. Featuring a max power dissipation of 61.4W and operating temperature up to 225°C, this enhancement mode transistor has a plastic/epoxy package body and tin terminal finish for surface mount assembly.
TSD2922 by STMicroelectronics

TSD2922

STMicroelectronics

TSD2922 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V. Operating in the Ultra High Frequency Band, it has a max temperature of 200 °C. This transistor is commonly used in applications requiring high power and frequency performance, such as telecommunications and radar systems.
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
MRF8P20165WHSR5 by Freescale Semiconductor

MRF8P20165WHSR5

Freescale Semiconductor

MRF8P20165WHSR5 by Freescale is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the S BAND, has a 65V DS Breakdown Voltage, and can be used as an AMPLIFIER. The package is RECTANGULAR, made of CERAMIC/METAL, and supports surface mount technology.
CGH31240F by Wolfspeed

CGH31240F

Wolfspeed

CGH31240F by Wolfspeed is a N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it comes in a ceramic, metal-sealed co-fired package with flange mount style.
PD54003L by STMicroelectronics

PD54003L

STMicroelectronics

PD54003L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max temp of 150 °C.
TRF7000PK by Texas Instruments

TRF7000PK

Texas Instruments

TRF7000PK by Texas Instruments is a single N-channel RF Power FET with 15V DS breakdown voltage and 6A drain current. Ideal for L Band applications, it operates in depletion mode with a max power dissipation of 4W at 175°C ambient temperature.
PD85025C by STMicroelectronics

PD85025C

STMicroelectronics

PD85025C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
FLL120MK by Sumitomo Electric Industries

FLL120MK

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: JUNCTION;
A2T09VD250NR1 by NXP Semiconductors

A2T09VD250NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
PD55008L-E by STMicroelectronics

PD55008L-E

STMicroelectronics

STMicroelectronics' PD55008L-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, it offers 5A Drain Current and 19.5W Power Dissipation in a SQUARE PLASTIC package with NO LEAD terminals.
MRF136 by New Jersey Semiconductor Products

MRF136

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 65 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
MRFE6S9060NR1 by Freescale Semiconductor

MRFE6S9060NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;
BLF6G27S-45,118 by Ampleon Netherlands B V

BLF6G27S-45,118

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Terminal Form: FLAT;
MRFE6VP5300NR1 by Freescale Semiconductor

MRFE6VP5300NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
SD2920 by STMicroelectronics

SD2920

STMicroelectronics

SD2920 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max DS breakdown voltage of 125V, operates at very high frequencies, and supports a drain current of up to 13.9A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
MRFE6VP6300HR3 by Freescale Semiconductor

MRFE6VP6300HR3

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Peak Reflow Temperature (C): 260; Case Connection: SOURCE;
BLF6G20LS-110 by NXP Semiconductors

BLF6G20LS-110

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 29 A;