NXP Semiconductors - BLF7G15LS-300P,112

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BLF7G15LS-300P,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF7G15LS-300P,112
Description N-CHANNEL; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 45 A; Maximum Operating Temperature: 200 Cel; Maximum Drain Current (Abs) (ID): 45 A;
Datasheet BLF7G15LS-300P,112 Datasheet
In Stock3,028
NAME DESCRIPTION
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 45 A
Maximum Drain Current (Abs) (ID): 45 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
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