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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF7G22L-100P,112 |
| Description | N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 200 Cel; |
| Datasheet | BLF7G22L-100P,112 Datasheet |
| In Stock | 96 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | 934065695112 |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 200 Cel |
| Sub-Category: | FET General Purpose Power |
| Peak Reflow Temperature (C): | 260 |
| Polarity or Channel Type: | N-CHANNEL |









