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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF7G27L-150P,112 |
| Description | N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 37 A; Maximum Drain Current (Abs) (ID): 37 A; Maximum Operating Temperature: 225 Cel; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | BLF7G27L-150P,112 Datasheet |
| In Stock | 1,961 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
AMPNXPBLF7G27L-150P,112 2156-BLF7G27L-150P112-NX |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 225 Cel |
| Maximum Drain Current (ID): | 37 A |
| Maximum Drain Current (Abs) (ID): | 37 A |
| Sub-Category: | FET General Purpose Powers |
| Polarity or Channel Type: | N-CHANNEL |








