NXP Semiconductors - BLF8G10LS-270GV

  1. Home
  2. NXP Semiconductors - BLF8G10LS-270GV
BLF8G10LS-270GV by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G10LS-270GV
Description RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
Datasheet BLF8G10LS-270GV Datasheet
In Stock2,021
NAME DESCRIPTION
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,021 $32.722 $66,131.162

Popular Products

Category Top Products

934065124112 by NXP Semiconductors

934065124112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD20015STR-E by STMicroelectronics

PD20015STR-E

STMicroelectronics

PD20015STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
SD57120 by STMicroelectronics

SD57120

STMicroelectronics

SD57120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This versatile component is ideal for high-power amplification in compact designs.
PD54003STR-E by STMicroelectronics

PD54003STR-E

STMicroelectronics

PD54003STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
BLL6H0514-25,112 by Ampleon Netherlands B V

BLL6H0514-25,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Minimum DS Breakdown Voltage: 100 V; Package Shape: RECTANGULAR;
LET9045TR by STMicroelectronics

LET9045TR

STMicroelectronics

LET9045TR by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates at up to 165 °C. Its compact surface mount design ensures efficient performance in various electronic devices.
A2T21H360-23NR6 by NXP Semiconductors

A2T21H360-23NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
BLP15H9S100GZ by Ampleon Netherlands B V

BLP15H9S100GZ

Ampleon Netherlands B V

BLP15H9S100GZ by Ampleon Netherlands B V is an N-CHANNEL RF FET with 106V DS Breakdown Voltage and 18dB Power Gain, ideal for AMPLIFIER applications in L BAND. It features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE up to 225°C.
BLF878 by NXP Semiconductors

BLF878

NXP Semiconductors

The NXP Semiconductors BLF878 is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 89V. It operates in the Ultra High Frequency Band and features a COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR device has a FLANGE MOUNT package style and can withstand peak reflow temperatures up to 260°C.
D1028UK by Tt Electronics Plc

D1028UK

Tt Electronics Plc

D1028UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR, METAL-OXIDE SEMICONDUCTOR technology, and can withstand up to 200°C operating temperature.
FLL120MK by Sumitomo Electric Industries

FLL120MK

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: JUNCTION;
RD15HVF1 by Mitsubishi Electric

RD15HVF1

Mitsubishi Electric

RD15HVF1 by Mitsubishi Electric is an N-CHANNEL RF Power FET with a 30V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 4A, power dissipation of 48W, and operates in ENHANCEMENT MODE at up to 150°C temperature.
2SK1028 by Toshiba

2SK1028

Toshiba

Toshiba's 2SK1028 is an N-CHANNEL RF Power FET with a 100V DS breakdown voltage, ideal for amplifier applications. Operating in enhancement mode, it offers a max drain current of 6A and power dissipation of 125W. With a very high frequency band, this transistor is designed for flange mount installation in various electronic devices.
AFT09MS007NT1 by Freescale Semiconductor

AFT09MS007NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 182 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
A5G35S008N-3400 by NXP Semiconductors

A5G35S008N-3400

NXP Semiconductors

RF Power Field-Effect Transistors;
AFT05MS004NT1 by Freescale Semiconductor

AFT05MS004NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
CGH40180PP by Wolfspeed

CGH40180PP

Wolfspeed

CGH40180PP by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
MRF9030LR1 by NXP Semiconductors

MRF9030LR1

NXP Semiconductors

NXP Semiconductors' MRF9030LR1 is a single N-channel RF Power FET with 68V DS breakdown voltage, ideal for amplifier applications in the UHF band. Featuring a max power dissipation of 92W and operating temperature up to 200°C, this MOSFET is designed for surface mount installation in high-frequency circuits.
BLF878,112 by NXP Semiconductors

BLF878,112

NXP Semiconductors

NXP Semiconductors BLF878,112 is an N-CHANNEL RF Power FET with 2 elements for AMPLIFIER applications. It operates in the ULTRA HIGH FREQUENCY BAND, with a max power dissipation of 300W and a min DS breakdown voltage of 89V. The package style is FLANGE MOUNT, suitable for surface mount assembly at a max temp of 200°C.
PTVA101K02EVV1XWSA1 by Wolfspeed

PTVA101K02EVV1XWSA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: L BAND;