NXP Semiconductors - BLF8G20LS-140V

  1. Home
  2. NXP Semiconductors - BLF8G20LS-140V
BLF8G20LS-140V by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G20LS-140V
Description RF Small Signal Field-Effect Transistors;
Datasheet BLF8G20LS-140V Datasheet
In Stock3,372
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,372 - -

Popular Products

Category Top Products

PD57002S by STMicroelectronics

PD57002S

STMicroelectronics

PD57002S by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, power gain of 15 dB, and operates in the ultra-high frequency band. This surface-mount transistor supports up to 4.75W dissipation at 165 °C.
934054130115 by NXP Semiconductors

934054130115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;
BLP10H605 by NXP Semiconductors

BLP10H605

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
934055957215 by NXP Semiconductors

934055957215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; JESD-609 Code: e3;
BF909WR,115 by NXP Semiconductors

BF909WR,115

NXP Semiconductors

BF909WR,115 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a PLASTIC/EPOXY package. It operates in DUAL GATE, ENHANCEMENT MODE for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a max Drain Current of 0.04 A and a Breakdown Voltage of 7 V, it is ideal for high-frequency circuit designs.
PD57002S-E by STMicroelectronics

PD57002S-E

STMicroelectronics

PD57002S-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a 65V breakdown voltage, 15 dB power gain, and operates in the ultra-high frequency band. Ideal for compact designs with a max temp of 165 °C.
BF908WRT/R by NXP Semiconductors

BF908WRT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N5486RLRA by Onsemi

2N5486RLRA

Onsemi

Onsemi's 2N5486RLRA is an N-CHANNEL RF FET with 10 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a max ID of 0.03 A and operates up to 150 °C, housed in a CYLINDRICAL package with PLASTIC/EPOXY body.
BLF184XRS by NXP Semiconductors

BLF184XRS

NXP Semiconductors

BLF184XRS by NXP Semiconductors is an N-CHANNEL RF FET with 135V DS Breakdown Voltage and 22.8 dB Power Gain, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a COMMON SOURCE configuration, METAL-OXIDE SEMICONDUCTOR technology, and FLATPACK package style.
MPF102ZL1 by Onsemi

MPF102ZL1

Onsemi

MPF102ZL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at up to 125 °C. Featuring a VERY HIGH FREQUENCY BAND, this transistor has 3 terminals and a max Crss of 3pF.
3SK167 by Onsemi

3SK167

Onsemi

3SK167 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring high-frequency signal amplification in electronic devices operating up to 125 °C ambient temperature.
BF904AWR by NXP Semiconductors

BF904AWR

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: SOURCE; Terminal Position: DUAL;
BF244BZL1 by Onsemi

BF244BZL1

Onsemi

BF244BZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BLF202,115 by NXP Semiconductors

BLF202,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.7 W; No. of Terminals: 8; Terminal Form: GULL WING;
BF991-TAPE-13 by NXP Semiconductors

BF991-TAPE-13

NXP Semiconductors

BF991-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max drain current of 20 mA and a breakdown voltage of 20 V. This surface-mount transistor operates in the very high frequency band, ideal for compact designs.
BF245C by Fairchild Semiconductor

BF245C

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; No. of Terminals: 3; Terminal Finish: TIN SILVER COPPER;
BF556A-TAPE-13 by NXP Semiconductors

BF556A-TAPE-13

NXP Semiconductors

BF556A-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
2N5953 by Texas Instruments

2N5953

Texas Instruments

2N5953 by Texas Instruments is an N-CHANNEL RF FET with a max power dissipation of 0.36W. It is commonly used for switching applications due to its single configuration and junction technology. With a max operating temperature of 150°C, it features a cylindrical package shape with wire terminals.
934055958115 by NXP Semiconductors

934055958115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G4;
BF908,215 by NXP Semiconductors

BF908,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;