NXP Semiconductors - BLF8G20LS-400PV

  1. Home
  2. NXP Semiconductors - BLF8G20LS-400PV
BLF8G20LS-400PV by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G20LS-400PV
Description RF Power Field-Effect Transistors;
Datasheet BLF8G20LS-400PV Datasheet
In Stock79
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
79 - -

Popular Products

Category Top Products

FLL177ME by Fujitsu Semiconductor America

FLL177ME

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: GALLIUM ARSENIDE;
MRFE6VP6300HR5 by NXP Semiconductors

MRFE6VP6300HR5

NXP Semiconductors

The NXP Semiconductors MRFE6VP6300HR5 is an RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 130V. It operates in the ultra high frequency band and is commonly used as an amplifier. This surface mount transistor has a max operating temperature of 225°C.
934064635118 by NXP Semiconductors

934064635118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLF6G13L-250P by NXP Semiconductors

BLF6G13L-250P

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Qualification: Not Qualified; Case Connection: SOURCE;
SD2900 by STMicroelectronics

SD2900

STMicroelectronics

SD2900 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 0.9A. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE and SILICON element material.
A2T27S020GNR1 by NXP Semiconductors

A2T27S020GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
AFT09MP055NR1 by NXP Semiconductors

AFT09MP055NR1

NXP Semiconductors

N-CHANNEL; Maximum Power Dissipation (Abs): 625 W; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
PD54003-E by STMicroelectronics

PD54003-E

STMicroelectronics

STMicroelectronics' PD54003-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. With a max ID of 4A and 52.8W power dissipation, it's ideal for high-power RF amplification needs.
FLC107WG by Fujitsu

FLC107WG

Fujitsu

FLC107WG by Fujitsu is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. It has a max power dissipation of 7.5W and can handle high frequencies up to C BAND. Ideal for applications requiring high-power amplification in the RF communication systems.
934061525112 by NXP Semiconductors

934061525112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 33 A; Package Shape: RECTANGULAR; Terminal Position: DUAL;
PD54008 by STMicroelectronics

PD54008

STMicroelectronics

STMicroelectronics PD54008 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 5A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a GULL WING terminal form, SMALL OUTLINE package style, and can handle up to 73W power dissipation at 165 °C.
AFV121KHR5 by NXP Semiconductors

AFV121KHR5

NXP Semiconductors

AFV121KHR5 by NXP Semiconductors is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 112V and a Min Power Gain of 18.5dB. It is commonly used as an AMPLIFIER in L BAND applications due to its ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology.
CGHV59350F by Wolfspeed

CGHV59350F

Wolfspeed

CGHV59350F by Wolfspeed is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Power Gain of 11.5 dB, ideal for amplifier applications in the C BAND frequency range. This HIGH ELECTRON MOBILITY transistor operates in DEPLETION MODE, with a max Drain Current of 24A and can withstand temperatures from -40 to 125 °C.
MRF141G by Tyco Electronics M/a-com

MRF141G

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Peak Reflow Temperature (C): NOT SPECIFIED;
CGHV40100F by Wolfspeed

CGHV40100F

Wolfspeed

Wolfspeed's CGHV40100F is an N-CHANNEL RF FET with 150V DS breakdown voltage. Ideal for S BAND applications, it features GaN technology, 8.7A max drain current, and DEPLETION MODE operation in a FLANGE MOUNT package.
MRF6V2150NR1 by Freescale Semiconductor

MRF6V2150NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified;
SD2931-10W by STMicroelectronics

SD2931-10W

STMicroelectronics

SD2931-10W by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W at 200°C.
ST16045 by STMicroelectronics

ST16045

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934061275112 by NXP Semiconductors

934061275112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A2T07D160W04SR3 by NXP Semiconductors

A2T07D160W04SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;