NXP Semiconductors - BLF8G24LS-100GV

  1. Home
  2. NXP Semiconductors - BLF8G24LS-100GV
BLF8G24LS-100GV by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G24LS-100GV
Description RF Power Field-Effect Transistors;
Datasheet BLF8G24LS-100GV Datasheet
In Stock2,202
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,202 - -

Popular Products

Category Top Products

PD54008L by STMicroelectronics

PD54008L

STMicroelectronics

PD54008L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount device excels in high-power scenarios with a dissipation of up to 44 W.
PD54008S-E by STMicroelectronics

PD54008S-E

STMicroelectronics

PD54008S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 165 °C.
MRF136 by Tyco Electronics M/a-com

MRF136

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-CRFM-F4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
SD2951-10 by STMicroelectronics

SD2951-10

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF6S20010GNR1 by NXP Semiconductors

MRF6S20010GNR1

NXP Semiconductors

NXP's MRF6S20010GNR1 is a single N-channel RF FET with 68V DS breakdown voltage, ideal for amplifier applications in S band frequencies. It features a plastic/epoxy package, Gull Wing terminals, and operates in enhancement mode up to 225°C.
STAC1011-500 by STMicroelectronics

STAC1011-500

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SD2932W by STMicroelectronics

SD2932W

STMicroelectronics

SD2932W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 500W max power dissipation. Ideal for high-power applications, it operates at up to 200°C.
MMRF5014HR5 by NXP Semiconductors

MMRF5014HR5

NXP Semiconductors

The NXP Semiconductors MMRF5014HR5 is an N-CHANNEL RF Power FET with 150V DS Breakdown Voltage and 17dB Power Gain, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a CERAMIC, METAL-SEALED COFIRED package and operates b/w -55°C to 225°C.
PD84008L-E by STMicroelectronics

PD84008L-E

STMicroelectronics

PD84008L-E by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates at up to 150 °C. This surface-mount transistor ensures efficient performance in compact designs.
A2I22D050GNR1 by NXP Semiconductors

A2I22D050GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3;
MRF300AN-50MHZ by NXP Semiconductors

MRF300AN-50MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934064584118 by NXP Semiconductors

934064584118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-CDFP-F2; Minimum DS Breakdown Voltage: 65 V;
SD57030-01 by STMicroelectronics

SD57030-01

STMicroelectronics

SD57030-01 by STMicroelectronics is an N-channel RF Power FET with a 65V DS breakdown voltage and 4A max drain current. It operates in the ultra-high frequency band, suitable for amplifier applications. This enhancement mode transistor has a max power dissipation of 74W and can withstand temperatures up to 200°C.
RF5L05750CF2 by STMicroelectronics

RF5L05750CF2

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
BLF147 by NXP Semiconductors

BLF147

NXP Semiconductors

The NXP Semiconductors BLF147 is a single N-channel RF Power FET with a very high frequency band. It has a max drain current of 25A, operating in enhancement mode for amplifier applications. With a package style of flange mount and ceramic-metal-sealed co-fired body material, it offers a max power dissipation of 220W at 200°C ambient temperature.
MRF255 by Motorola

MRF255

Motorola

MRF255 by Motorola is an N-CHANNEL RF Power FET with 13 dB Gp for AMPLIFIER applications. It operates in ENHANCEMENT MODE at VERY HIGH FREQUENCY BAND, handling up to 22 A ID and dissipating 175 W at max temp of 200 °C.
934065696118 by NXP Semiconductors

934065696118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): FLATPACK; Case Connection: SOURCE;
PD55008STR-E by STMicroelectronics

PD55008STR-E

STMicroelectronics

PD55008STR-E by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 4A and a max power dissipation of 52.8W.
MRF151A by M/a-com Technology Solutions

MRF151A

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Maximum Drain Current (ID): 16 A;
MRF1513T1 by NXP Semiconductors

MRF1513T1

NXP Semiconductors

NXP Semiconductors' MRF1513T1 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max Drain Current of 2A, 31.2W Power Dissipation, and operates at up to 150°C temperature.