NXP Semiconductors - BLF8G27LS-100

  1. Home
  2. NXP Semiconductors - BLF8G27LS-100
BLF8G27LS-100 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G27LS-100
Description RF Small Signal Field-Effect Transistors;
Datasheet BLF8G27LS-100 Datasheet
In Stock735
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
735 - -

Popular Products

Category Top Products

MPF102RLRM by Onsemi

MPF102RLRM

Onsemi

MPF102RLRM by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at up to 125 °C. Featuring a VERY HIGH FREQUENCY BAND, this transistor has 3 terminals and a max Crss of 3pF.
2N3819 by Allegro MicroSystems

2N3819

Allegro MicroSystems

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;
2N4416 by Calogic

2N4416

Calogic

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL;
BF998B-GS08 by Vishay Telefunken

BF998B-GS08

Vishay Telefunken

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
BF245BRL1 by Onsemi

BF245BRL1

Onsemi

BF245BRL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF998 by Philips Components

BF998

Philips Components

N-CHANNEL; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .025 pF;
BF991,215 by NXP Semiconductors

BF991,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
2N4221 by NXP Semiconductors

2N4221

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .015 A; Field Effect Transistor Technology: JUNCTION; Terminal Form: WIRE;
J309RLRP by Onsemi

J309RLRP

Onsemi

J309RLRP by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a DEPLETION MODE and SILICON element material, this THROUGH-HOLE transistor operates at up to 125 °C with a Crss of 2.5 pF.
BF1206F by NXP Semiconductors

BF1206F

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-F6; Maximum Drain Current (Abs) (ID): .03 A;
BF2030E6327 by Infineon Technologies

BF2030E6327

Infineon Technologies

BF2030E6327 by Infineon Technologies is an N-CHANNEL RF FET with 10V DS Breakdown Voltage, 20dB Power Gain, and 0.2W Power Dissipation. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to DUAL GATE, DEPLETION MODE operation. Package: PLASTIC/EPOXY, Surface Mountable with GULL WING terminals.
SST310-T1-E3 by Vishay Intertechnology

SST310-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SST310-T1-E3 is an N-CHANNEL RF FET for ULTRA HIGH FREQUENCY SWITCHING. With a 25V DS Breakdown Voltage, it operates in DEPLETION MODE. The PLASTIC/EPOXY package with GULL WING terminals and Matte Tin finish makes it suitable for SMALL OUTLINE applications.
BLC8G27LS-100AV by NXP Semiconductors

BLC8G27LS-100AV

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
MMBF5484LT1 by Motorola

MMBF5484LT1

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; No. of Terminals: 3;
BF998R by NXP Semiconductors

BF998R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 2; Operating Mode: DUAL GATE, DEPLETION MODE;
BF511-T by NXP Semiconductors

BF511-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF545A-T by NXP Semiconductors

BF545A-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Terminal Position: DUAL; Transistor Element Material: SILICON;
BF989-T by NXP Semiconductors

BF989-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 4; Transistor Application: AMPLIFIER;
FLC057WG by Eudyna Devices

FLC057WG

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
J308RLRA by Onsemi

J308RLRA

Onsemi

J308RLRA by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a Crss of 2.5 pF and operates in DEPLETION MODE with a TIN LEAD finish.