NXP Semiconductors - BLF8G27LS-100PJ

  1. Home
  2. NXP Semiconductors - BLF8G27LS-100PJ
BLF8G27LS-100PJ by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G27LS-100PJ
Description N-CHANNEL; Maximum Power Dissipation (Abs): 25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .86 A; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): .86 A;
Datasheet BLF8G27LS-100PJ Datasheet
In Stock4,816
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 25 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): .86 A
Maximum Drain Current (Abs) (ID): .86 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,816 $74.110 $356,913.760

Popular Products

Category Top Products

NTF6P02T3G by Onsemi

NTF6P02T3G

Onsemi

NTF6P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 35A IDM, and 0.05 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 8.3W.
MSC035SMA170B by Microsemi

MSC035SMA170B

Microsemi

Power Field-Effect Transistors;
IRFZ44N,127 by NXP Semiconductors

IRFZ44N,127

NXP Semiconductors

NXP Semiconductors' IRFZ44N,127 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 160A IDM and 0.022 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W and can handle up to 175°C temperature.
IRFP450PBF by Vishay Intertechnology

IRFP450PBF

Vishay Intertechnology

Vishay Intertechnology's IRFP450PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 180W and operates in ENHANCEMENT MODE at up to 150°C.
IRFR3710ZTRPBF by Infineon Technologies

IRFR3710ZTRPBF

Infineon Technologies

IRFR3710ZTRPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 220A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 175°C.
STD12NF06LT4 by STMicroelectronics

STD12NF06LT4

STMicroelectronics

STD12NF06LT4 by STMicroelectronics is an N-channel power FET with a 60V DS breakdown voltage and 48A max pulsed drain current. It is used for switching applications, operates in enhancement mode, and has a built-in diode. The transistor features a 0.12 ohm max drain-source resistance and can handle up to 30W of power dissipation.
IXTK3N250L by IXYS Corporation

IXTK3N250L

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Maximum Pulsed Drain Current (IDM): 8 A; JEDEC-95 Code: TO-264AA;
AUIRF4905STRL by International Rectifier

AUIRF4905STRL

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 55 V;
IRF7749L1TRPBF by International Rectifier

IRF7749L1TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1;
STP11NK50ZFP by STMicroelectronics

STP11NK50ZFP

STMicroelectronics

STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
IRF640STRRPBF by Vishay Intertechnology

IRF640STRRPBF

Vishay Intertechnology

Vishay Intertechnology's IRF640STRRPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max Drain Current of 18A and Pulsed Drain Current of 72A, suitable for SWITCHING applications. The transistor operates in ENHANCEMENT MODE, with a power dissipation of 130W in a SMALL OUTLINE package style.
G3R75MT12K by Genesic Semiconductor

G3R75MT12K

Genesic Semiconductor

Power Field-Effect Transistors;
ZXMP6A17GTA by Zetex Plc

ZXMP6A17GTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
FDD4685-F085P by Onsemi

FDD4685-F085P

Onsemi

FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
IRFR5305TRPBF by International Rectifier

IRFR5305TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
MSC035SMA170B by Microchip Technology

MSC035SMA170B

Microchip Technology

Power Field-Effect Transistors;
IRFZ44NS by International Rectifier Hirel Products

IRFZ44NS

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Terminal Position: SINGLE;
IRFZ44NS by Philips Semiconductors

IRFZ44NS

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
FQT4N20LTF by Onsemi

FQT4N20LTF

Onsemi

FQT4N20LTF by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 3.4A and Avalanche Energy Rating of 52mJ. With ENHANCEMENT MODE operation and small outline package style, it offers efficient performance in various electronic devices.
IRF7842TRPBF by Infineon Technologies

IRF7842TRPBF

Infineon Technologies

Infineon's IRF7842TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 140A IDM, 50mJ EAS, and 0.005 ohm RDS(on). Operating from -55 to 150 °C, it has a small outline package with GULL WING terminals for surface mount assembly.