BLL1214-35 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLL1214-35
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Terminal Form: FLAT; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
Datasheet	BLL1214-35 Datasheet
In Stock	4,019

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	110 W
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	SOURCE
Moisture Sensitivity Level (MSL):	NOT APPLICABLE
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	75 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,019	$214.510	$862,115.690

08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;

Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;