NXP Semiconductors - BLL6H1214LS-500

  1. Home
  2. NXP Semiconductors - BLL6H1214LS-500
BLL6H1214LS-500 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLL6H1214LS-500
Description RF Power Field-Effect Transistors;
Datasheet BLL6H1214LS-500 Datasheet
In Stock3,992
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,992 - -

Popular Products

Category Top Products

MRFE6VP5150GNR1 by Freescale Semiconductor

MRFE6VP5150GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER; No. of Elements: 2;
D1007UK by Tt Electronics Plc

D1007UK

Tt Electronics Plc

D1007UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, this transistor has a max operating temperature of 200°C and comes in a FLANGE MOUNT package style.
MRF6VP11KHR5 by NXP Semiconductors

MRF6VP11KHR5

NXP Semiconductors

N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
AFT27S006NT1 by Freescale Semiconductor

AFT27S006NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Package Shape: RECTANGULAR; Terminal Position: DUAL;
MRF151 by Motorola

MRF151

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 200 Cel; JESD-30 Code: O-CRFM-F4;
935442486528 by NXP Semiconductors

935442486528

NXP Semiconductors

RF Power Field-Effect Transistors;
MRF181ZR1 by Onsemi

MRF181ZR1

Onsemi

MRF181ZR1 by Onsemi is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 2A, making it ideal for amplifier applications. The transistor features a CERAMIC, METAL-SEALED COFIRED package with GULL WING terminals for surface mount installation.
VRF151G by Microchip Technology

VRF151G

Microchip Technology

VRF151G by Microchip Technology is a N-CHANNEL RF Power FET with 170V DS Breakdown Voltage, 40A Max Drain Current, and 500W Max Power Dissipation. Commonly used in amplifier applications for Very High Frequency Band operations due to its ceramic-metal sealed co-fired package and dual terminal position.
934061964112 by NXP Semiconductors

934061964112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F5;
934065317112 by NXP Semiconductors

934065317112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Terminal Position: DUAL; Case Connection: SOURCE;
FLC107WG by Fujitsu

FLC107WG

Fujitsu

FLC107WG by Fujitsu is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. It has a max power dissipation of 7.5W and can handle high frequencies up to C BAND. Ideal for applications requiring high-power amplification in the RF communication systems.
A2T07D160W04SR3 by NXP Semiconductors

A2T07D160W04SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD85025S-E by STMicroelectronics

PD85025S-E

STMicroelectronics

PD85025S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
PD85006-E by STMicroelectronics

PD85006-E

STMicroelectronics

PD85006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 36.5 W.
934065325112 by NXP Semiconductors

934065325112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A3G26H502W17SR3 by NXP Semiconductors

A3G26H502W17SR3

NXP Semiconductors

NXP Semiconductors A3G26H502W17SR3 is an N-CHANNEL RF FET with 150V DS breakdown voltage, 11.3 dB power gain, and GaN element material. Primarily used in S Band applications as a depletion mode amplifier with flatpack package style for surface mount assembly.
A2T18S166W12SR3 by NXP Semiconductors

A2T18S166W12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
934065979112 by NXP Semiconductors

934065979112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: S BAND; No. of Elements: 2; Package Shape: RECTANGULAR;
MRF9030LR1 by Motorola

MRF9030LR1

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
PD57045STR-E by STMicroelectronics

PD57045STR-E

STMicroelectronics

PD57045STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.