NXP Semiconductors - BLL6H1214LS-500

  1. Home
  2. NXP Semiconductors - BLL6H1214LS-500
BLL6H1214LS-500 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLL6H1214LS-500
Description RF Power Field-Effect Transistors;
Datasheet BLL6H1214LS-500 Datasheet
In Stock3,992
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,992 - -

Popular Products

Category Top Products

A2T23H300-24SR6 by NXP Semiconductors

A2T23H300-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A3T18H408W24SR3 by NXP Semiconductors

A3T18H408W24SR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
CGH40045F by Wolfspeed

CGH40045F

Wolfspeed

CGH40045F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for S BAND applications. Featuring HIGH ELECTRON MOBILITY GaN technology, it operates in ENHANCEMENT MODE at up to 175°C. This FLANGE MOUNT transistor has a METAL-SEALED COFIRED CERAMIC package and GOLD OVER NICKEL terminal finish.
MRF1511NT1 by Freescale Semiconductor

MRF1511NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Case Connection: SOURCE; Transistor Element Material: SILICON;
MRFE6VP100HR5 by Freescale Semiconductor

MRFE6VP100HR5

Freescale Semiconductor

N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
CGH31240F by Wolfspeed

CGH31240F

Wolfspeed

CGH31240F by Wolfspeed is a N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it comes in a ceramic, metal-sealed co-fired package with flange mount style.
CGHV96130F by Wolfspeed

CGHV96130F

Wolfspeed

RF Power Field-Effect Transistors;
PD55025S-E by STMicroelectronics

PD55025S-E

STMicroelectronics

STMicroelectronics PD55025S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max ID of 7A, 79W power dissipation, and operates in ENHANCEMENT MODE. The transistor has a small outline package style and can withstand temperatures up to 165°C.
A3G26H350W17SR3 by NXP Semiconductors

A3G26H350W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;
934055939112 by NXP Semiconductors

934055939112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 65 V;
BLF6G13L-250P by NXP Semiconductors

BLF6G13L-250P

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Qualification: Not Qualified; Case Connection: SOURCE;
RD16HHF1-501 by Mitsubishi Electric

RD16HHF1-501

Mitsubishi Electric

RF Power Field-Effect Transistors;
PD57070-E by STMicroelectronics

PD57070-E

STMicroelectronics

STMicroelectronics' PD57070-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE at up to 165°C.
MRF136Y by Motorola

MRF136Y

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
A5G35S008NT6 by NXP Semiconductors

A5G35S008NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
A2I25D012NR1 by NXP Semiconductors

A2I25D012NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
PD55008STR-E by STMicroelectronics

PD55008STR-E

STMicroelectronics

PD55008STR-E by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 4A and a max power dissipation of 52.8W.
934065319118 by NXP Semiconductors

934065319118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
934056582112 by NXP Semiconductors

934056582112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2;
A5G38H045NT4 by NXP Semiconductors

A5G38H045NT4

NXP Semiconductors

RF Power Field-Effect Transistors;