NXP Semiconductors - BLP05H675XR

  1. Home
  2. NXP Semiconductors - BLP05H675XR
BLP05H675XR by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLP05H675XR
Description RF Power Field-Effect Transistors;
Datasheet BLP05H675XR Datasheet
In Stock211
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
211 - -

Popular Products

Category Top Products

PD85025STR-E by STMicroelectronics

PD85025STR-E

STMicroelectronics

PD85025STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
SD2932W by STMicroelectronics

SD2932W

STMicroelectronics

SD2932W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 500W max power dissipation. Ideal for high-power applications, it operates at up to 200°C.
MRFX1K80NR5 by NXP Semiconductors

MRFX1K80NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
A2T21H360-23NR6 by NXP Semiconductors

A2T21H360-23NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
934056499112 by NXP Semiconductors

934056499112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934065183112 by NXP Semiconductors

934065183112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Additional Features: HIGH RELIABILITY; Minimum DS Breakdown Voltage: 65 V;
934064584112 by NXP Semiconductors

934064584112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
934056498112 by NXP Semiconductors

934056498112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A; Qualification: Not Qualified;
934064593112 by NXP Semiconductors

934064593112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;
PD55015 by STMicroelectronics

PD55015

STMicroelectronics

PD55015 by STMicroelectronics is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, with a max drain current of 5A and power dissipation of 73W. The transistor has a PLASTIC/EPOXY body, GULL WING terminals, and can withstand up to 165°C operating temperature.
934065319112 by NXP Semiconductors

934065319112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Terminal Form: FLAT; Package Shape: RECTANGULAR;
STAC2932BW by STMicroelectronics

STAC2932BW

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FLL57MK by Fujitsu

FLL57MK

Fujitsu

Fujitsu's FLL57MK is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring CERAMIC, METAL-SEALED COFIRED package and 21.4W power dissipation at 175°C, it offers reliable performance in DEPLETION MODE operation.
LET21030C by STMicroelectronics

LET21030C

STMicroelectronics

LET21030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the S band. This surface-mount transistor ensures efficient performance up to 200 °C.
TGI7785-25L by Toshiba

TGI7785-25L

Toshiba

Toshiba's TGI7785-25L is an N-channel RF Power FET with a 50V DS breakdown voltage, ideal for X-band applications. Featuring a 4.5A drain current and 70W power dissipation, this DEPLETION MODE transistor is designed for amplifier use in high-frequency circuits. Its CERAMIC, METAL-SEALED COFIRED package ensures reliable performance in demanding environments.
MRFE6VP6300HR5 by NXP Semiconductors

MRFE6VP6300HR5

NXP Semiconductors

The NXP Semiconductors MRFE6VP6300HR5 is an RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 130V. It operates in the ultra high frequency band and is commonly used as an amplifier. This surface mount transistor has a max operating temperature of 225°C.
PD85006-E by STMicroelectronics

PD85006-E

STMicroelectronics

PD85006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 36.5 W.
LET20015 by STMicroelectronics

LET20015

STMicroelectronics

LET20015 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates at up to 2A drain current, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
MRF137 by Asi Semiconductor

MRF137

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (Abs) (ID): 5 A; Terminal Form: FLAT;
AFT05MP075GNR1 by NXP Semiconductors

AFT05MP075GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 690 W; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40;