NXP Semiconductors - BLP10H603

  1. Home
  2. NXP Semiconductors - BLP10H603
BLP10H603 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLP10H603
Description RF Power Field-Effect Transistors;
Datasheet BLP10H603 Datasheet
In Stock1,031
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,031 - -

Popular Products

Category Top Products

MRF6VP121KHR5 by Freescale Semiconductor

MRF6VP121KHR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
LET9045STR by STMicroelectronics

LET9045STR

STMicroelectronics

LET9045STR by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 5A Drain Current and 160W Power Dissipation. Ideal for small outline packages requiring high power handling capabilities.
A2T18H160-24SR3 by NXP Semiconductors

A2T18H160-24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD54003L by STMicroelectronics

PD54003L

STMicroelectronics

PD54003L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max temp of 150 °C.
BLF861A by Asi Semiconductor

BLF861A

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F4;
MRF6V12500HSR5 by Freescale Semiconductor

MRF6V12500HSR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Case Connection: SOURCE;
BLF147 by Ampleon Netherlands B V

BLF147

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;
MRF136Y by Motorola

MRF136Y

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
MRFE6VP5300NR1 by Freescale Semiconductor

MRFE6VP5300NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
BLF861A by NXP Semiconductors

BLF861A

NXP Semiconductors

The NXP Semiconductors BLF861A is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a COMMON SOURCE configuration, it has a max Drain Current of 18A and can handle up to 318W power dissipation at 200°C.
AFV121KHR5 by NXP Semiconductors

AFV121KHR5

NXP Semiconductors

AFV121KHR5 by NXP Semiconductors is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 112V and a Min Power Gain of 18.5dB. It is commonly used as an AMPLIFIER in L BAND applications due to its ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology.
PD55003L-E by STMicroelectronics

PD55003L-E

STMicroelectronics

STMicroelectronics PD55003L-E is an N-CHANNEL RF FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 2.5A and power dissipation of 14W. The chip carrier package style and matte tin terminal finish make it suitable for high-frequency circuit designs.
PD57006TR-E by STMicroelectronics

PD57006TR-E

STMicroelectronics

PD57006TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in compact designs with high power dissipation up to 20 W.
MMRF5014HR5 by Freescale Semiconductor

MMRF5014HR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 17 dB; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
MRFE6VP5600HR6 by Freescale Semiconductor

MRFE6VP5600HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1670 W; Minimum DS Breakdown Voltage: 130 V; JESD-30 Code: R-CDFM-F4;
934056375135 by NXP Semiconductors

934056375135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;
PD85015STR-E by STMicroelectronics

PD85015STR-E

STMicroelectronics

PD85015STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.
934061174118 by NXP Semiconductors

934061174118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;
MRFE6VS25GNR1 by Freescale Semiconductor

MRFE6VS25GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
RF5L05950CF2 by STMicroelectronics

RF5L05950CF2

STMicroelectronics

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;