NXP Semiconductors - BLP7G22-05

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BLP7G22-05 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLP7G22-05
Description RF Power Field-Effect Transistors;
Datasheet BLP7G22-05 Datasheet
In Stock1,261
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MRFE6VP6300HR3 by Freescale Semiconductor

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MRF141G by Asi Semiconductor

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LET9002 by STMicroelectronics

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LET9002 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in enhancing performance while managing up to 4 W power dissipation.
PD55003L by STMicroelectronics

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STMicroelectronics

STMicroelectronics PD55003L is an N-CHANNEL RF Power FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY BAND. With 40V DS Breakdown Voltage, it has a max ID of 2.5A and can dissipate up to 26.6W power at 150°C.
AFT09MS015NT1 by Freescale Semiconductor

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AFT05MS004NT1 by Freescale Semiconductor

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A2T20H330W24NR6 by NXP Semiconductors

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RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40;
TSD2921 by STMicroelectronics

TSD2921

STMicroelectronics

TSD2921 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Min Power Gain of 12dB. It operates in the ULTRA HIGH FREQUENCY BAND, has a Max Power Dissipation of 300W, and is suitable for applications requiring high power amplification in the field of RF communications.
CG2H40010P by Wolfspeed

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CG2H40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 15dB Power Gain, ideal for C Band applications. Operating in DEPLETION MODE, it features Gallium Nitride technology, can handle up to 1.5A Drain Current, and operates b/w -40°C to 150°C temperature range.
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RF Power Field-Effect Transistors;
AFG24S100HR5 by NXP Semiconductors

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RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
LET9130 by STMicroelectronics

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STMicroelectronics

LET9130 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 15 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power scenarios with a dissipation capacity of 217 W.
GS61008P-MR by Gan Systems

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
AFT09MS007NT1 by Freescale Semiconductor

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Freescale Semiconductor

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M/a-com Technology Solutions

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