NXP Semiconductors - BLS6G3135-20,112

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BLS6G3135-20,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLS6G3135-20,112
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
Datasheet BLS6G3135-20,112 Datasheet
In Stock3,689
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 2.1 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2.1 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
3,689 $170.230 $627,978.470

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