BLS7G2729L-350P by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLS7G2729L-350P
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON;
Datasheet	BLS7G2729L-350P Datasheet
In Stock	1,564

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	33 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	65 V
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	S BAND
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED
Moisture Sensitivity Level (MSL):	NOT APPLICABLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,564	-	-

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;

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