BLS7G2729LS-350P by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLS7G2729LS-350P
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
Datasheet	BLS7G2729LS-350P Datasheet
In Stock	3,804

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	33 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	65 V
Terminal Position:	DUAL
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-CDFP-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	S BAND
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED
Moisture Sensitivity Level (MSL):	NOT APPLICABLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,804	-	-

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