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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLT50T/R |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 175 Cel; No. of Elements: 1; |
| Datasheet | BLT50T/R Datasheet |
| In Stock | 2,964 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 10 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .5 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 25 |
| No. of Terminals: | 4 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 10 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Additional Features: | HIGH RELIABILITY |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Collector-Base Capacitance: | 6 pF |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 2 W |
