NXP Semiconductors - BLT70-T

BLT70-T by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLT70-T
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
Datasheet BLT70-T Datasheet
In Stock1,516
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .25 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 2.1 W
Minimum Power Gain (Gp): 6 dB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 25
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 8 V
Maximum Collector-Base Capacitance: 3.5 pF
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