NXP Semiconductors - BLT82

BLT82 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLT82
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
Datasheet BLT82 Datasheet
In Stock3,730
NAME DESCRIPTION
Minimum Power Gain (Gp): 8 dB
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: MS-012AA
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 8
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1.9 W
Maximum Collector-Emitter Voltage: 10 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 175 Cel
Maximum Power Dissipation Ambient: 1.9 W
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