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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLV25 |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 17.5 A; |
| Datasheet | BLV25 Datasheet |
| In Stock | 153 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 600 MHz |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 17.5 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 220 W |
| Terminal Position: | UNSPECIFIED |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-CXFM-F6 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 220 W |
| Minimum Power Gain (Gp): | 10 dB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 15 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 33 V |
| Additional Features: | HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS |
