NXP Semiconductors - BLV859

BLV859 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLV859
Description NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 28 V;
Datasheet BLV859 Datasheet
In Stock2,154
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): 15 A
Configuration: COMMON EMITTER, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 145 W
Maximum Collector-Emitter Voltage: 28 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: EMITTER
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