NXP Semiconductors - BSD213

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BSD213 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSD213
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BSD213 Datasheet
In Stock53
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .05 A
JEDEC-95 Code: TO-72
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 10 V
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 125 Cel
Case Connection: SUBSTRATE
Maximum Drain-Source On Resistance: 45 ohm
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