NXP Semiconductors - BSH120T

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BSH120T by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSH120T
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Transistor Element Material: SILICON; Terminal Position: BOTTOM;
Datasheet BSH120T Datasheet
In Stock4,726
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.2 A
JEDEC-95 Code: TO-92
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .83 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 2.2 A
Maximum Drain-Source On Resistance: .1 ohm
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