BSH204T/R by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BSH204T/R
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .75 ohm;
Datasheet	BSH204T/R Datasheet
In Stock	651

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.7 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	12 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.75 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
651	-	-

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RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;

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