NXP Semiconductors - BSH206T/R

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BSH206T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSH206T/R
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING; Transistor Application: SWITCHING;
Datasheet BSH206T/R Datasheet
In Stock3,980
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .75 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: .5 ohm
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