NXP Semiconductors - BSN20BKR

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BSN20BKR by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSN20BKR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .265 A; Reference Standard: IEC-60134;
Datasheet BSN20BKR Datasheet
In Stock116,217
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 7 pF
Maximum Drain Current (ID): .265 A
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: IEC-60134
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 3.2 ohm
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