NXP Semiconductors - BSP230-TAPE-13

  1. Home
  2. NXP Semiconductors - BSP230-TAPE-13
BSP230-TAPE-13 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BSP230-TAPE-13
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; No. of Terminals: 4; Maximum Operating Temperature: 150 Cel;
Datasheet BSP230-TAPE-13 Datasheet
In Stock4,845
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 10 ns
Maximum Drain Current (ID): .21 A
Maximum Pulsed Drain Current (IDM): .75 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 30 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 17 ohm
Maximum Feedback Capacitance (Crss): 15 pF
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 300 V
Qualification: Not Qualified
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,845 - -

Popular Products

Category Top Products

BSS138LT3G by Onsemi

BSS138LT3G

Onsemi

BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
2N7002BKV,115 by NXP Semiconductors

2N7002BKV,115

NXP Semiconductors

NXP Semiconductors' 2N7002BKV,115 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.34A Drain Current, and 1.6 ohm On Resistance. With a max temp of 150°C, it's ideal for small outline packages in ENHANCEMENT MODE circuits.
BVSS138LT1G by Onsemi

BVSS138LT1G

Onsemi

BVSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates b/w -55 to 150 °C and complies with AEC-Q101 standard.
BS170P by Diodes Incorporated

BS170P

Diodes Incorporated

The Diodes Inc. BS170P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.27A ID. Ideal for switching applications, it features a single configuration, 5 ohm RDS(on), and operates in enhancement mode. The package style is IN-LINE with PLASTIC/EPOXY body material and SILICON element material.
FDV301ND87Z by Fairchild Semiconductor

FDV301ND87Z

Fairchild Semiconductor

FDV301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.22A ID and 4 ohm RDS(on). The transistor operates at up to 150°C, making it suitable for various electronic devices.
FDG6332C by Onsemi

FDG6332C

Onsemi

The Onsemi FDG6332C is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include max drain current of 0.7A, min DS breakdown voltage of 20V, and max power dissipation of 0.3W.
BSS138NH6327 by Infineon Technologies

BSS138NH6327

Infineon Technologies

BSS138NH6327 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.23A Drain Current and 3.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.36W at temperatures ranging from -55 to 150 °C.
ZVP2106AM1 by Zetex Plc

ZVP2106AM1

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .28 A; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 235;
BSS83PL6327XT by Infineon Technologies

BSS83PL6327XT

Infineon Technologies

BSS83PL6327XT by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage and 0.33A max drain current. It is used in enhancement mode applications, featuring a built-in diode and 2 ohm max on resistance for efficient performance in small outline packages.
ZXMP4A16GTA by Diodes Incorporated

ZXMP4A16GTA

Diodes Incorporated

ZXMP4A16GTA by Diodes Inc. is a P-CHANNEL FET with 40V DS breakdown voltage, 4.6A max drain current, and 0.06 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation at up to 150°C.
2N7002DWH6327XTSA1 by Infineon Technologies

2N7002DWH6327XTSA1

Infineon Technologies

2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
2N7000 by Fairchild Semiconductor

2N7000

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BC548B by Shanghai Lunsure Electronic Technology

BC548B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
DMP2035U-7 by Diodes Incorporated

DMP2035U-7

Diodes Incorporated

DMP2035U-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 3.6A max drain current, and 0.045 ohm RDS(on). Ideal for switching applications in small outline packages, it operates in enhancement mode with a max temp of 150°C.
SQ2361AEES-T1-GE3 by Vishay Intertechnology

SQ2361AEES-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SQ2361AEES-T1-GE3 is a P-channel FET with 60V DS breakdown voltage and 2.8A max drain current. Ideal for small outline applications, it features 0.17 ohm max on-resistance and 45pF feedback capacitance, meeting AEC-Q101 standards for automotive use.
2N7002K by Fairchild Semiconductor

2N7002K

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Minimum DS Breakdown Voltage: 60 V; JESD-30 Code: R-PDSO-G3;
BSS138PS by Nexperia

BSS138PS

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 60 V;
BSS84W-7-F by Diodes Incorporated

BSS84W-7-F

Diodes Incorporated

BSS84W-7-F by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.2W. This MOSFET comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.
BS170-D26Z by Onsemi

BS170-D26Z

Onsemi

BS170-D26Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.5A Drain Current, 0.83W Power Dissipation, and 5 ohm On Resistance. With a max operating temperature of 150°C, this ENHANCEMENT MODE transistor in CYLINDRICAL package is suitable for various electronic circuits.
2N7002 by Supertex

2N7002

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;