NXP Semiconductors - BSP230115

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BSP230115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSP230115
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Datasheet BSP230115 Datasheet
In Stock50
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 15 pF
Maximum Drain Current (ID): .21 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 300 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 17 ohm
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