NXP Semiconductors - BSP89135

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BSP89135 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSP89135
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 10 ohm; Minimum DS Breakdown Voltage: 240 V;
Datasheet BSP89135 Datasheet
In Stock2,439
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .35 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 10 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 9 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 240 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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