BSR51-AMMO by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BSR51-AMMO
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-PBCY-T3; Maximum VCEsat: 1.6 V;
Datasheet	BSR51-AMMO Datasheet
In Stock	1,304

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	2000
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	1500 ns
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum VCEsat:	1.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,304	-	-

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