NXP Semiconductors - BSR52-T/R

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BSR52-T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSR52-T/R
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 2000;
Datasheet BSR52-T/R Datasheet
In Stock520
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Maximum Turn On Time (ton): 500 ns
JEDEC-95 Code: TO-92
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 2000
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
Maximum Turn Off Time (toff): 1300 ns
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Additional Features: BUILT-IN BIAS RESISTOR
Maximum Operating Temperature: 150 Cel
Maximum VCEsat: 1.6 V
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