NXP Semiconductors - BSR58T/R

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BSR58T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSR58T/R
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: 60 ohm;
Datasheet BSR58T/R Datasheet
In Stock1,034
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
Maximum Drain Current (ID): .005 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 60 ohm
Maximum Feedback Capacitance (Crss): 5 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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