BSR62-AMMO by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BSR62-AMMO
Description	PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 2000;
Datasheet	BSR62-AMMO Datasheet
In Stock	2,282

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	1000 ns
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	2000
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	1500 ns
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum VCEsat:	1.8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,282	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;