BSR62-T/R by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BSR62-T/R
Description	PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Maximum Turn On Time (ton): 500 ns;
Datasheet	BSR62-T/R Datasheet
In Stock	191

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	500 ns
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	700 ns
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	2000
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Additional Features:	BUILT-IN BIAS RESISTOR
Maximum VCEsat:	1.8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
191	-	-

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