NXP Semiconductors - BSS60

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BSS60 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSS60
Description PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1 A; Maximum Power Dissipation Ambient: 5 W; Package Style (Meter): CYLINDRICAL;
Datasheet BSS60 Datasheet
In Stock199
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): 1 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-39
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 2000
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 45 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 200 Cel
Case Connection: COLLECTOR
Maximum VCEsat: 1.6 V
Maximum Power Dissipation Ambient: 5 W
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