BST52T/R by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BST52T/R
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;
Datasheet	BST52T/R Datasheet
In Stock	2,433

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	400 ns
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	1500 ns
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-243AA
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	2000
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Maximum VCEsat:	1.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,433	-	-

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RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);