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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BST80115 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 80 V; |
| Datasheet | BST80115 Datasheet |
| In Stock | 4,418 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 12 pF |
| Maximum Drain Current (ID): | .5 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 80 V |
| Qualification: | Not Qualified |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 3 ohm |
