NXP Semiconductors - BST82-T

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BST82-T by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BST82-T
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Minimum DS Breakdown Voltage: 80 V;
Datasheet BST82-T Datasheet
In Stock1,826
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 6 pF
Maximum Drain Current (ID): .175 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 10 ohm
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