NXP Semiconductors - BTW45-1000RU

BTW45-1000RU by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BTW45-1000RU
Description	SCR; Surface Mount: NO; Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us; Maximum Holding Current: 75 mA; Maximum DC Gate Trigger Current: 75 mA; Maximum DC Gate Trigger Voltage: 1.5 V;
Datasheet	BTW45-1000RU Datasheet
In Stock	3,393

BTW45-1000RU Technical Details

NAME	DESCRIPTION
Trigger Device Type:	SCR
Sub-Category:	Silicon Controlled Rectifiers
Surface Mount:	NO
Maximum Leakage Current:	3 mA
Maximum On-state Voltage:	2 V
Non Repetitive Peak On-state Current:	300 A
Maximum DC Gate Trigger Voltage:	1.5 V
Minimum Critical Rate of Rise of Off-state Voltage:	200 V/us
Maximum Holding Current:	75 mA
Maximum DC Gate Trigger Current:	75 mA
Maximum On-state Current:	16 A
Maximum Operating Temperature:	125 Cel
Repetitive Peak Off-state Voltage:	1000 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,393	-	-

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