NXP Semiconductors - BU1508DX

BU1508DX by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BU1508DX
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
Datasheet BU1508DX Datasheet
In Stock148
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 35 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 6600 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 35 W
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 4
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 700 V
Additional Features: FORMED LEAD OPTIONS ARE AVAILABLE
Maximum VCEsat: 5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
148 - -

Popular Products

Category Top Products