NXP Semiconductors - BU2507DF

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BU2507DF by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BU2507DF
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Maximum Collector-Emitter Voltage: 700 V; No. of Terminals: 3;
Datasheet BU2507DF Datasheet
In Stock1,866
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 5
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 700 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: BUILT-IN BIAS RESISTOR
Case Connection: ISOLATED
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