NXP Semiconductors - BU2722AX

  1. Home
  2. NXP Semiconductors - BU2722AX
BU2722AX by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BU2722AX
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Maximum Turn Off Time (toff): 3750 ns; Transistor Application: SWITCHING;
Datasheet BU2722AX Datasheet
In Stock1,517
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 10 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 4.5
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 825 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 3750 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum VCEsat: 1 V
Maximum Power Dissipation Ambient: 45 W
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,517 - -

Popular Products

Category Top Products

TIP42A by New Jersey Semiconductor Products

TIP42A

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;
2SC5200 by Micro Commercial Components

2SC5200

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Application: AMPLIFIER; Maximum Collector-Emitter Voltage: 230 V;
TIP36C by Semitronics

TIP36C

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP125 by Toshiba

TIP125

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
MJD340T4 by Onsemi

MJD340T4

Onsemi

MJD340T4 by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it has a min hFE of 30 and is made of silicon material.
2N2905A by General Transistor

2N2905A

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
TIP3055 by Bourns

TIP3055

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
JANTX2N3055 by Cobham Plc

JANTX2N3055

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Body Material: METAL; No. of Terminals: 2;
BD13916STU by Onsemi

BD13916STU

Onsemi

BD13916STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 12.5W Ptot. Ideal for switching applications, it has hFE of min. 100 and operates up to 150°C. The package is through-hole with matte tin finish, suitable for flange mount configurations.
JANTXV2N3055 by Cobham Plc

JANTXV2N3055

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Elements: 1; No. of Terminals: 2;
JANTX2N3055 by New England Semiconductor

JANTX2N3055

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: O-MBFM-P2;
TIP147 by Nte Electronics

TIP147

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
2N3055 by Micro Electronics

2N3055

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BDW93C by STMicroelectronics

BDW93C

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB;
TIP120 by International Devices

TIP120

International Devices

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
TIP122 by Bourns

TIP122

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
TIP147 by New Jersey Semiconductor Products

TIP147

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;
2N2905A by Vpt Components

2N2905A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 300 ns;
TIP3055 by NXP Semiconductors

TIP3055

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 15 A; Package Body Material: PLASTIC/EPOXY;
TIP42CG by Changzhou Galaxy Century Microelectronics

TIP42CG

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 6 A;